Effect of cycling on ultra-thin HfZrO₄, ferroelectric synaptic weights

Abstract Two-terminal ferroelectric synaptic weights are fabricated on silicon. The active layers consist of a 2 nm thick WO x film and 2.7 HfZrO 4 (HZO) grown by atomic layer deposition. ultra-thin HZO is crystallized in the phase using millisecond flash at temperature only 500 °C, evidenced x-rays diffraction electron microscopy. current density increased four orders magnitude compared to based 5 film. Potentiation depression (analog resistive switching) demonstrated either pulses constant duration (as short as 20 nanoseconds) increasing amplitude, or amplitude (+/?1 V) duration. cycle-to-cycle variation below 1%. Temperature dependent electrical characterisation performed series device cycled up 10 8 times: they reveal that possess semiconducting properties. fatigue leads decrease, high state only, conductivity activation energy.